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Diffusion of implanted nitrogen in germanium

✍ Scribed by Skarlatos, Dimitrios; Barozzi, Mario; Bersani, Massimo; Vouroutzis, Nikos Z.; Ioannou-Sougleridis, Vassilios

Book ID
118766669
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
347 KB
Volume
10
Category
Article
ISSN
1862-6351

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In this work, we investigate the implantation and diffusion of phosphorous (P) in germanium (Ge). Ge wafers were implanted at two different doses (5 Γ‚ 10 13 and 10 15 cm Γ€2 ) and a range of energies (30, 50 and 150 keV). Part of the wafers was covered with a 40 nm silicon dioxide (SiO 2 ) and an 80