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Diffusion of implanted impurities in amorphous Si

✍ Scribed by J.M. Poate; D.C. Jacobson; J.S. Williams; R.G. Elliman; D.O. Boerma

Book ID
114168109
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
256 KB
Volume
19-20
Category
Article
ISSN
0168-583X

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Boron ion implantation into pre-amorphized silicon is studied. Pre-amorphization is performed either by F + or Si + implantation prior to B + implantation at 10 keV with 3 Γ‚ 10 15 ions/cm 2 . Broadening of the boron profile can be suppressed markedly in the pre-amorphized layers. For instance, the a