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Diffusion in a bimetal having different concentrations of silicon

✍ Scribed by S. A. Golovanenko; S. B. Maslenkov


Book ID
112382277
Publisher
Springer US
Year
1966
Tongue
English
Weight
336 KB
Volume
8
Category
Article
ISSN
0026-0673

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The charge collection technique of scanning electron microscopy is widely used to measure the minority carrier diffusion length L in semiconductors. In order to obtain L, the continuity equation for the excess carder concentration Ap must be solved with suitable boundary conditions. L is supposed to