Diffusion constant of carriers in germanium
โ Scribed by A. Many
- Publisher
- Elsevier Science
- Year
- 1954
- Weight
- 241 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0031-8914
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
POTENTIAL BARRIERS IN LOW ANGLE GRAIN BOUNDARIES and calculate the constants B, C, D as the limite B = limx\_~0 (#(z) + A In z), C = limx\_~0 (w 2 + Aqx), D = lim,\_~ o (dw2/d, --A/z2) ... To evaluate the potential in the neighbourhood of z = 0 the first two terms are enough and we find for B B = --
The dependence of carrier lifetime on temperature has been investigated for n-type and p-type germanium. It is found that with decreasing temperature the lifetime decreases, but much faster in n-type than in p-type. The results are discussed in terms of recombination through trapping states. At suff
urenweisen Verunreinigungen der Losung, Tentellen Veri& tionsversuch wurde eine n-G+Elektrode potentiostatisch kmzzeitig ins ano lsche Grenzstromgebiet gepulst und der ZusHtzliche Siittigungss-