Carrier extraction in germanium
โ Scribed by A.F. Gibson
- Publisher
- Elsevier Science
- Year
- 1954
- Weight
- 95 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0031-8914
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โฆ Synopsis
POTENTIAL BARRIERS IN LOW ANGLE GRAIN BOUNDARIES and calculate the constants B, C, D as the limite B = limx_~0 (#(z) + A In z), C = limx_~0 (w 2 + Aqx), D = lim,_~ o (dw2/d, --A/z2) ... To evaluate the potential in the neighbourhood of z = 0 the first two terms are enough and we find for B B = --A/2 + (41~) M'(M' + ~r[312) + (4aafir) E(9, k) + + 2AF (gk) M'/K + In (K/hA) e2(o)e4(o)/e3(o)81 (nF(gk)/K) with M' = E(gk) K --F(gk) E; 81, 82, 83, 84, the Theta-functions and sin ~o=(1/k) ~/(K --E)/K. For K > 3 we have "--ff-J --~-K-, V--if-+ A In LT CK-~ (l -~-~)
๐ SIMILAR VOLUMES
urenweisen Verunreinigungen der Losung, Tentellen Veri& tionsversuch wurde eine n-G+Elektrode potentiostatisch kmzzeitig ins ano lsche Grenzstromgebiet gepulst und der ZusHtzliche Siittigungss-
The dependence of carrier lifetime on temperature has been investigated for n-type and p-type germanium. It is found that with decreasing temperature the lifetime decreases, but much faster in n-type than in p-type. The results are discussed in terms of recombination through trapping states. At suff