✦ LIBER ✦

Differential molecular beam epitaxy for multilayered bipolar devices

✍ Scribed by U. König; M. Kuisl; J.F. Luy; H. Kibbel; F. Schäffler

Book ID: 103421417
Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 520 KB
Volume: 184
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(90)90420-i

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

What can molecular beam epitaxy do for s

What can molecular beam epitaxy do for silicon devices?

✍ F.G. Allen 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 356 KB

Improved Molecular Beam Epitaxy for Fabr

Improved Molecular Beam Epitaxy for Fabricating AlGaN/GaN Heterojunction Devices

✍ Kishino, K. ;Kikuchi, A. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 512 KB

Optoelectronic devices by gas source mol

Optoelectronic devices by gas source molecular beam epitaxy

✍ L. Goldstein; C. Starck; J.-Y. Emery; F. Gaborit; D. Bonnevie; F. Poingt; M. Lam 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 463 KB

Nitrides optoelectronic devices grown by

Nitrides optoelectronic devices grown by molecular beam epitaxy

✍ Kauer, M. ;Bousquet, V. ;Hooper, S. E. ;Barnes, J. M. ;Windle, J. ;Tan, W. S. ;H 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 183 KB

## Abstract We report on the characteristics of our recent room temperature continuous‐wave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE). Uncoated ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous‐wave (cw) threshold current of 110 mA, co

In situ spectroscopic ellipsometry in mo

In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices

✍ G.N. Maracas; J.L. Edwards; D.S. Gerber; R. Droopad 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 454 KB

AlGaN/GaN heterojunction bipolar transis

AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy

✍ Raman, Ajay ;Hurni, Christophe A. ;Speck, James S. ;Mishra, Umesh K. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 495 KB

## Abstract We demonstrate AlGaN/GaN heterojunction bipolar transistors (HBTs) by ammonia molecular beam epitaxy (NH~3~ MBE). The several benefits offered by NH~3~ MBE for the growth of GaN based vertical electronic devices are discussed. To obtain good ohmic contacts to the base layer, devices wer