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Different origins of Tc-suppression in YBa2(Cu1−xMx)3Oy(M=Co and Zn)

✍ Scribed by Shoji Terada; Norio Kobayashi; Hideo Iwasaki; Ayako Tokiwa; Masae Kikuchi; Yasuhiko Syono; Yoshio Muto

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
301 KB
Volume
165-166
Category
Article
ISSN
0921-4526

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✦ Synopsis

The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa2(CU 1-xMxhOy(M = Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M = Co, while it remains almost constant for M = Zn. The suppression of T e in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes. K)()

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Tl'mpE'ralure ( K)

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