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Dielectric properties of terbium fluoride thin film capacitors

✍ Scribed by K.R. Paramasivam; M. Radhakrishnan; C. Balasubramanian


Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
337 KB
Volume
74
Category
Article
ISSN
0040-6090

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Thin films of several thicknesses in the form of MIM structures are prepared from the powders of tin oxide (SnO,) by thermal evaporation technique in a vacuum of Torr. The dielectric properties of tin oxide film capacitors have been studied with temperatures varying from 77 to 400 K and also with fr