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Dielectric properties of pure and lanthanum modified bismuth titanate thin films

✍ Scribed by A.Z. Simões; R.F. Pianno; C.S. Riccardi; L.S. Cavalcante; E. Longo; J.A. Varela

Book ID
116601807
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
823 KB
Volume
454
Category
Article
ISSN
0925-8388

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## Pb La Ti O (PLT10) thin film was prepared by an MOD process on ZrO / Si substrate. The studies 0.9 0.1 0.975 3 2 showed that the ZrO buffer layer with a thickness of 0.1 mm is not thermal stable and O atoms in O 2 2 atmosphere could diffuse into Si substrate through grain boundaries to form S