Dielectric and ferroelectric properties of in-plane lead lanthanum titanate thin films

✍ Scribed by Z.T. Song; H.L.W. Chan; C.L. Choy; C.L. Lin

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 140 KB
• Volume: 66
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(02)01016-x

✦ Synopsis

Pb La Ti

O (PLT10) thin film was prepared by an MOD process on ZrO / Si substrate. The studies 0.9 0.1 0.975 3 2

showed that the ZrO buffer layer with a thickness of 0.1 mm is not thermal stable and O atoms in O 2 2

atmosphere could diffuse into Si substrate through grain boundaries to form SiO at the interface between 2 ZrO / Si during the heating treatment process of preparing the thin film. It was observed that there were some 2 hillocks in PLT10 surface, which was caused by the expanding of SiO , and which then led to rough interface.

2

ZrO can not form effectively dielectric layer, which caused a parasitic capacitance between the PLT film and 2 silicon substrate. The space charges of Si substrate formed pinning centers, which hampered the normal domains switch and leading to abnormal P-E loops.