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Dielectric properties in aged amorphous silicon oxide thin film

✍ Scribed by F. Tarrach; A. Ch’hayder; H. Guermazi; S. Guermazi


Book ID
116602096
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
452 KB
Volume
456
Category
Article
ISSN
0925-8388

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Thin films of several thicknesses in the form of MIM structures are prepared from the powders of tin oxide (SnO,) by thermal evaporation technique in a vacuum of Torr. The dielectric properties of tin oxide film capacitors have been studied with temperatures varying from 77 to 400 K and also with fr