## Abstract HfO~2~ high‐__K__ gate dielectric has been used as a new gate dielectric in metal–oxide–semiconductor structures. First‐principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of
Dielectric loss caused by oxygen vacancies in titania ceramics
✍ Scribed by Robert C. Pullar; Stuart J. Penn; Xiaoru Wang; Ian M. Reaney; Neil McN. Alford
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 533 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0955-2219
No coin nor oath required. For personal study only.
✦ Synopsis
Undoped TiO 2 exhibited deterioration in microwave (MW) dielectric loss as it reached its maximum density due to the reduction of Ti 4+ to Ti 3+ causing oxygen vacancies at high sintering temperatures. By adding small amounts of acceptor dopants with ionic radii between 0.5 and 0.95 Å, reduction during sintering was suppressed. The upper limit of ionic radius was discrete with almost no observed effect using dopants >0.96 Å ionic radius. In addition, the microwave dielectric loss of undoped TiO 2 could be improved by annealing at 1500 • C for 10 h in air, presumably as a result of re-oxidation. High loss samples exhibited a dark 'core' to the naked eye which was absent in low loss ceramics. Transmission electron microscopy revealed that grains in the dark core contained planar defects attributed to the condensation of O vacancies onto specific crystallographic planes, in a manner similar to that observed in Magnelli phases.
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## Abstract We have developed a novel route to reduce the dielectric loss of CaCu~3~Ti~4~O~12~ (CCTO) material based on the internal‐barrier‐layer‐capacitance (IBLC) model. By the partial La‐for‐Ca substitution the dielectric loss was suppressed re‐markably while the giant dielectric constant still