✦ LIBER ✦

Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures

✍ Scribed by Wagner, J.; Obloh, H.; Kunzer, M.; Maier, M.; KoÌhler, K.; Johs, B.

Book ID: 121491669
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 384 KB
Volume: 89
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1342022

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Piezoelectric actuation of (GaN/)AlGaN/G

Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures

✍ Tonisch, K.; Buchheim, C.; Niebelschütz, F.; Schober, A.; Gobsch, G.; Cimalla, 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 761 KB

Electroreflectance spectra of InGaN/AlGa

Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures

✍ L. P. Avakyants; M. L. Badgutdinov; P. Yu. Bokov; A. V. Chervyakov; S. S. Shirok 📂 Article 📅 2007 🏛 Springer 🌐 English ⚖ 264 KB

Transport coefficients of AlGaN/GaN hete

Transport coefficients of AlGaN/GaN heterostructures

✍ M. Ahoujja; W. C. Mitchel; S. Elhamri; R. S. Newrock; D. B. Mast; J. M. Redwing; 📂 Article 📅 1998 🏛 Springer US 🌐 English ⚖ 126 KB

Effect of dislocations on electron mobil

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

✍ Kaun, Stephen W.; Burke, Peter G.; Hoi Wong, Man; Kyle, Erin C. H.; Mishra, Umes 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 1014 KB

Material growth and device characterizat

Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates

✍ Hsiao, Yu-Lin; Chang, Chia-Ao; Chang, Edward Yi; Maa, Jer-Shen; Chang, Chia-Ta; 📂 Article 📅 2014 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 981 KB

Optimization of homoepitaxially grown Al

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

✍ Grenko, J. A. ;Ebert, C. W. ;Reynolds, C. L. ;Duscher, G. J. ;Barlage, D. W. ;Jo 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 536 KB

## Abstract We report on the growth of Al~0.25~Ga~0.75~N/GaN heterostructures on low dislocation density semi‐insulating __c__‐axis GaN substrates by metalorganic vapor phase epitaxy (MOVPE). A room temperature (RT) Hall mobility (__µ__~RT~) up to 2065 cm^2^ V^−1^ s^−1^ at sheet density (__n__~s~)