๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

DICE: A Beneficial Short-Channel Effect in Nanoscale Double-Gate MOSFETs

โœ Scribed by Chouksey, S.; Fossum, J.G.


Book ID
114619121
Publisher
IEEE
Year
2008
Tongue
English
Weight
614 KB
Volume
55
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Source engineering in short channel doub
โœ S.K. Mandal; S. Das; C.K. Maiti ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 223 KB

Transistor channel lengths are being continually scaled to smaller dimensions to improve the high-frequency performance and package density, which will lead to the introduction of sub-50 nm gate lengths in production in the near future. In this paper, the performance of a double gate (DG) vertical m