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Diamond Schottky-pn diode with high forward current density and fast switching operation

โœ Scribed by Makino, Toshiharu; Tanimoto, Satoshi; Hayashi, Yusuke; Kato, Hiromitsu; Tokuda, Norio; Ogura, Masahiko; Takeuchi, Daisuke; Oyama, Kazuhiro; Ohashi, Hiromichi; Okushi, Hideyo; Yamasaki, Satoshi


Book ID
119995330
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
412 KB
Volume
94
Category
Article
ISSN
0003-6951

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Diamond Schottky p-n diode with high for
โœ Makino, Toshiharu ;Tanimoto, Satoshi ;Kato, Hiromitsu ;Tokuda, Norio ;Ogura, Mas ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 243 KB

## Abstract We successfully fabricated a diamond diode, namely a Schottky pโ€“n diode (SPND), which is composed of a fully depleted nโ€type active layer sandwiched between a highly doped pโ€type layer and a Schottky metal. The diamond SPND showed a high forward current density (over 4000โ€‰Aโ€‰cm^โˆ’2^ at 6โ€‰