✦ LIBER ✦

Diameter-dependent growth rate of InAs nanowires

✍ Scribed by Fröberg, L. E.; Seifert, W.; Johansson, J.

Book ID: 121480308
Publisher: The American Physical Society
Year: 2007
Tongue: English
Weight: 138 KB
Volume: 76
Category: Article
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.76.153401

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Diameter-Dependent Electron Mobility of

Diameter-Dependent Electron Mobility of InAs Nanowires

✍ Ford, Alexandra C.; Ho, Johnny C.; Chueh, Yu-Lun; Tseng, Yu-Chih; Fan, Zhiyong; 📂 Article 📅 2009 🏛 American Chemical Society 🌐 English ⚖ 909 KB

Dependence of the Growth Rate of Nanowir

Dependence of the Growth Rate of Nanowires on the Nanowire Diameter

✍ Kashchiev, Dimo 📂 Article 📅 2006 🏛 American Chemical Society 🌐 English ⚖ 50 KB

Growth characteristics and electrical pr

Growth characteristics and electrical properties of diameter-selective InAs nanowires

✍ Jae Cheol Shin, Ari Lee, Hyo Jin Kim, Jae Hun Kim… 📂 Article 📅 2013 🏛 The Korean Physical Society 🌐 English ⚖ 232 KB

Diameter-Dependent Growth Direction of E

Diameter-Dependent Growth Direction of Epitaxial Silicon Nanowires

✍ Schmidt, Volker; Senz, Stephan; Gösele, Ulrich 📂 Article 📅 2005 🏛 American Chemical Society 🌐 English ⚖ 387 KB

Origin of Diameter-Dependent Growth Dire

Origin of Diameter-Dependent Growth Direction of Silicon Nanowires

✍ Wang, C. X.; Hirano, Masahiro; Hosono, Hideo 📂 Article 📅 2006 🏛 American Chemical Society 🌐 English ⚖ 80 KB

Growth rate enhancement of InAs nanowire

Growth rate enhancement of InAs nanowire by molecular beam epitaxy

✍ J. Bubesh Babu; Kanji Yoh 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 915 KB

Surface diffusion kinetics plays a major role in the growth of III-V nanowires by the molecular beam epitaxial (MBE) technique. As/In flux is one of the key factors in determining the diffusion length, which eventually affect the growth rate, morphology and length of the InAs nanowire. To identify a