𝔖 Bobbio Scriptorium
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Devices and developments

✍ Scribed by Grant, Paul M.

Book ID
109789857
Publisher
Nature Publishing Group
Year
1994
Tongue
English
Weight
139 KB
Volume
371
Category
Article
ISSN
0028-0836

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## Abstract This paper reports on GaN/AlN light‐emitting devices relying on intersubband transitions. All samples have been grown by molecular beam epitaxy. We first present a systematic investigation of single or coupled GaN/AlN quantum wells grown by MBE. We then present the recent observation of