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Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

✍ Scribed by M.E. Gueunier-Farret; C. Bazin; J.P. Kleider; C. Longeaud; P. Bulkin; D. Daineka; T.H. Dao; P. Roca i Cabarrocas; P. Descamps; T. Kervyn de Meerendre; P. Leempoel; M. Meaudre; R. Meaudre

Book ID: 116669236
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 158 KB
Volume: 352
Category: Article
ISSN: 0022-3093
DOI: 10.1016/j.jnoncrysol.2006.01.080

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