Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

✍ Scribed by Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry

Publisher: Springer International Publishing
Year: 2019
Tongue: English
Leaves: 125
Edition: 1st ed.
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.

✦ Table of Contents

Front Matter ....Pages i-ix
Invention and Evaluation of Transistors and Integrated Circuits (Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry)....Pages 1-9
General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semiconductor Field Effect Transistor (SOI-MESFET) (Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry)....Pages 11-41
Modeling of Classical SOI MESFET (Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry)....Pages 43-58
Design and Modeling of Triple-Material Gate SOI MESFET (Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry)....Pages 59-71
Three-Dimensional Analytical Model of the Non-Classical Three-Gate SOI MESFET (Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry)....Pages 73-92
Analytical Investigation of Subthreshold Performance of SOI MESFET Devices (Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry)....Pages 93-111
Future Works on Silicon-on-Insulator Metal–Semiconductor Field Effect Transistors (SOI MESFETs) (Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry)....Pages 113-115
Back Matter ....Pages 117-122

✦ Subjects

Engineering; Circuits and Systems; Electronic Circuits and Devices; Electronics and Microelectronics, Instrumentation

📜 SIMILAR VOLUMES

Advanced Physical Models for Silicon Dev

📁 Advanced Physical Models for Silicon Device Simulation

✍ Priv.-Doz. Dr. rer. nat. Andreas Schenk (auth.) 📂 Library 📅 1998 🏛 Springer-Verlag Wien 🌐 English

<p>Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chap

Introduction to VLSI Silicon Devices: Ph

📁 Introduction to VLSI Silicon Devices: Physics, Technology and Characterization

✍ Badih El-Kareh, Richard J. Bombard (auth.) 📂 Library 📅 1986 🏛 Springer US 🌐 English

<p>There was a long felt need for this book in industrial and academic institutions. It provides new engineers, as well as practicing engineers and advanced laboratory personnel in the field of semiconductors a clear and thorough discussion of state-of-the-art silicon devices, without resorting to t

Amorphous and Microcrystalline Silicon S

📁 Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology

✍ Ruud E. I. Schropp, Miro Zeman (auth.) 📂 Library 📅 1998 🏛 Springer US 🌐 English

<p>Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in 1974. Scien tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystall

MOSFET modeling for circuit analysis and

📁 MOSFET modeling for circuit analysis and design

✍ Marcio C. Schneider 📂 Library 📅 2007 🏛 World Scientific 🌐 English

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.

Process technology for silicon carbide d

📁 Process technology for silicon carbide devices

✍ Carl-Mikael Zetterling, Carl-Mikael Zetterling 📂 Library 📅 2002 🏛 INSPEC 🌐 English

Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for for devices and integrated circuits operating at high voltage, high frequency and high temperature. The second book in the EMIS Processing series explains why SiC is so useful in electronics, gives clear guid

Perspectives, Science and Technologies f

📁 Perspectives, Science and Technologies for Novel Silicon on Insulator Devices

✍ Michel Bruel (auth.), Peter L. F. Hemment, V. S. Lysenko, A. N. Nazarov (eds.) 📂 Library 📅 2000 🏛 Springer Netherlands 🌐 English

<p>This proceedings volume contains the contributions of the speakers who attended the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" held at the Sanatorium Pushcha OLema, Kyiv, th Ukraine from It" to 15 October 1998. This meeting w