Process technology for silicon carbide devices

✍ Scribed by Carl-Mikael Zetterling, Carl-Mikael Zetterling

• Publisher: INSPEC
• Year: 2002
• Tongue: English
• Leaves: 200
• Series: EMIS processing series no. 2
• Category: Library

✦ Synopsis

Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for for devices and integrated circuits operating at high voltage, high frequency and high temperature. The second book in the EMIS Processing series explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics, etc.) and describes how these are integrated in device manufacture. The book should serve as an advanced tutorial and reference for those involved in applying the very latest technology emerging from university and commercial laboratories around the world.

Also available:

Silicon Wafer Bonding Technology for VLSI and MEMS Applications - ISBN 9780852960394
SIMOX - ISBN 9780863413346

The Institution of Engineering and Technology is one of the world's leading professional societies for the engineering and technology community. The IET publishes more than 100 new titles every year; a rich mix of books, journals and magazines with a back catalogue of more than 350 books in 18 different subject areas including:

-Power & Energy
-Renewable Energy
-Radar, Sonar & Navigation
-Electromagnetics
-Electrical Measurement
-History of Technology
-Technology Management

✦ Table of Contents

Content: Introduction 1 Advantages of SiC C.-M.Zetterling and M.Ostling 2 Bulk and epitaxial growth of SiC N.Nordell 3 Ion implantation and diffusion in SiC A.Schoner 4 Wet and dry etching of SiC S.J.Pearton 5 Thermally grown and deposited thermoelectrics E.O.Sveinbjornsson and C.-M.Zetterling 6 Schottky and ohmic contacts to SiC C.-M.Zetterling, S.-K.Lee and M.Ostling 7 Devices in SiC C.-M.Zetterling, S.M.Koo and M.Ostling Appendix 1: Other resources Appendix 2: Glossary Index