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Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer

✍ Scribed by Lam, Kai-Tak; Cao, Xi; Guo, Jing

Book ID: 121834452
Publisher: IEEE
Year: 2013
Tongue: English
Weight: 753 KB
Volume: 34
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2277918

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