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Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs

✍ Scribed by Irisawa, T.; Numata, T.; Tezuka, T.; Usuda, K.; Sugiyama, N.; Takagi, S.-I.

Book ID: 114619098
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 396 KB
Volume: 55
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2007.913082

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