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Device characteristics of Ti–InSnO thin film transistors with modulated double and triple channel structures

✍ Scribed by Kim, Chang Eun; Yun, Ilgu

Book ID: 123282115
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 673 KB
Volume: 537
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2013.04.030

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