Device characteristics of AlGaN/GaN MIS–HEMTs with high-k HfxZr1−xO2 (x=0.66,0.47,0.15) insulator layer

✍ Scribed by Chiu, Hsien-Chin; Wu, Chia-Hsuan; Chi, Ji-Fan; Chien, Feng-Tso

• Book ID: 122139593
• Publisher: Elsevier Science
• Year: 2014
• Tongue: English
• Weight: 802 KB
• Volume: 54
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2014.03.006