✦ LIBER ✦
Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high- k dielectric
✍ Scribed by Lee, B; Choi, Y H; Kirkpatrick, C; Huang, A Q; Misra, V
- Book ID
- 120486119
- Publisher
- Institute of Physics
- Year
- 2013
- Tongue
- English
- Weight
- 933 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0268-1242
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