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Device and process simulation of SOS and SOI MOSFETs

✍ Scribed by T. Yu. Kroupkina

Book ID
106523817
Publisher
Springer
Year
2005
Tongue
English
Weight
227 KB
Volume
34
Category
Article
ISSN
1063-7397

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The continued scaling of devices towards the ultimate limit of 50-nm MOSFET by the year 2007 necessitates the use of higher substrate doping densities in both conventional devices and in the alternative device technologies. The higher substrate doping density, on the other hand, gives rise to pronou