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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

✍ Scribed by C. Mauder; B. Reuters; L. Rahimzadeh Khoshroo; M.V. Rzheutskii; E.V. Lutsenko; G.P. Yablonskii; J.F. Woitok; M. Heuken; H. Kalisch; R.H. Jansen

Book ID
108166066
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
775 KB
Volume
312
Category
Article
ISSN
0022-0248

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High-excitation luminescence properties
High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates
✍ S. Miasojedovas; C. Mauder; S. Krotkus; A. Kadys; T. Malinauskas; K. JaraΕ‘iuΒ―nas πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 809 KB

Optically induced carrier dynamics was investigated in highly excited m-plane GaN films grown by metalorganic vapor phase epitaxy (MOVPE) on LiAlO 2 substrates and compared to a c-plane GaN reference. Photoluminescence (PL) spectra showing spontaneous and stimulated emission (SE) were investigated a