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Development of chemical beam epitaxy for the deposition of gallium nitride

✍ Scribed by C.R. Kingsley; T.J. Whitaker; A.T.S. Wee; R.B. Jackman; J.S. Foord

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
384 KB
Volume
29
Category
Article
ISSN
0921-5107

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Raman spectroscopy was applied to monitor the growth of GaN at temperatures around 600 Γ„C without interrupting the growth process. GaN was deposited on GaAs(100) and Si(111) substrates by molecular beam epitaxy using elemental Ga and atomic nitrogen provided by an r.f. plasma source. Sufficient sign