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Development of an apparatus for the doping of silicon by activated phosphorus ions

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📜 SIMILAR VOLUMES

1010. Development of an apparatus for th

📂 Article 📅 1967 🏛 Elsevier Science 🌐 English ⚖ 139 KB

Hall Study of Silicon Layers Doped with

✍ Zorin, E. I. ;Pavlov, P. V. ;Tetelbaum, D. I. ;Khokhlov, A. F. 📂 Article 📅 1971 🏛 John Wiley and Sons 🌐 English ⚖ 500 KB

On the electrical activity of transmutat

✍ Akulovich, N. I. ;Petrov, V. V. ;Utenko, V. I. 📂 Article 📅 1982 🏛 John Wiley and Sons 🌐 English ⚖ 201 KB

Changes in the transport properties of s

✍ S. Melsheimer; A. Rahmel; M. Schütze 📂 Article 📅 1997 🏛 Springer-Verlag 🌐 English ⚖ 350 KB

Phosphorus and boron doping effects on s

✍ M. -Y. Kang; T. Yamamoto; T. Matsui; T. Kuwano 📂 Article 📅 1996 🏛 Springer 🌐 English ⚖ 188 KB

An apparatus for measuring the electrica

✍ S. R. Gutman; V. A. Kremnev 📂 Article 📅 1963 🏛 Springer US 🌐 English ⚖ 255 KB