Development of a two-dimensional strip radiation sensor fabricated with normal silicon processes

✍ Scribed by Naoyuki Sawamoto; Yasushi Fukazawa; Takashi Ohsugi; Hiroshi Ohyama; Hiro Tajima; K. Yamamura

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 391 KB
• Volume: 579
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2007.05.317

✦ Synopsis

A two-dimensional readout micro-strip sensor processed with single-sided silicon processes has been designed and fabricated. Both p + (X) and n + (Y) electrodes are placed on one side. The n + electrode is surrounded with the p + strips to make isolation of each n + electrode. The test chip was fabricated at HPK. The detector properties have been measured and the basic idea of p + and n + structure on the sensor has been confirmed. However, a suppression of the breakdown is not sufficient to achieve deep depletion underneath the n + electrode. This comes from a too thin isolation SiO 2 layer between the p + and n + readout-strip at the crossing points.