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Development of a low angle forward reflected neutral oxygen beam for materials processing

โœ Scribed by D.H. Lee; J.W. Bae; S.D. Park; G.Y. Yeom


Book ID
117226618
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
342 KB
Volume
398-399
Category
Article
ISSN
0040-6090

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Atomic layer etching of (100)/(111) GaAs
โœ Woong Sun Lim; Sang Duk Park; Byoung Jae Park; Geun Young Yeom ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 462 KB

Characteristics of atomic layer etching of (100) GaAs and (111) GaAs have been investigated using Ne neutral beam and Cl 2 gas. By using a Ne neutral beam dose and a Cl 2 gas pressure higher than critical values of 3.03 ร— 10 16 atoms/cm 2 d cycle and 0.4 mTorr, respectively, steady state etch rates