Study on the low-angle forward-reflected neutral beam etching system for SiO2 etching

Atomic layer etching of (100)/(111) GaAs

Atomic layer etching of (100)/(111) GaAs with chlorine and low angle forward reflected Ne neutral beam

✍ Woong Sun Lim; Sang Duk Park; Byoung Jae Park; Geun Young Yeom 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 462 KB

Characteristics of atomic layer etching of (100) GaAs and (111) GaAs have been investigated using Ne neutral beam and Cl 2 gas. By using a Ne neutral beam dose and a Cl 2 gas pressure higher than critical values of 3.03 × 10 16 atoms/cm 2 d cycle and 0.4 mTorr, respectively, steady state etch rates