## Abstract This paper presents a compact Xβband, 9 W AlGaAs/InGaAs/GaAs PHEMT MMIC high power amplifier. This amplifier is designed to fully match a 50 Ξ© input and output impedance. Based on 0.35 ΞΌm gateβlength power PHEMT technology, a twoβstage power amplifier is fabricated on a 3βmil thick wafe
Development and demonstration of high-average power w-band gyro-amplifiers for radar applications
β Scribed by Blank, M.; Felch, K.; James, B.G.; Borchard, P.; Cahalan, P.; Chu, T.S.; Jory, H.; Danly, B.G.; Levush, B.; Calame, J.P.; Nguyen, K.T.; Pershing, D.E.
- Book ID
- 118746904
- Publisher
- IEEE
- Year
- 2002
- Tongue
- English
- Weight
- 550 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0093-3813
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