Deuterium-incorporated gate oxide of MOS devices fabricated by using deuterium ion implantation

✍ Scribed by Jae-Sung Lee; Kevin L. Lear

• Book ID: 115076806
• Publisher: The Korean Physical Society
• Year: 2012
• Tongue: English
• Weight: 464 KB
• Volume: 60
• Category: Article
• ISSN: 0374-4884
• DOI: 10.3938/jkps.60.1056