๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Determination of traps in poly(p-phenylene vinylene) light emitting diodes by charge-based deep level transient spectroscopy

โœ Scribed by Gaudin, Olivier; Jackman, Richard B; Nguyen, Thien-Phap; Le Rendu, Philippe


Book ID
118222682
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
398 KB
Volume
90
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Deep level transient spectroscopy signat
โœ E. Pลaczek-Popko; J. Trzmiel; E. Zielony; S. Grzanka; R. Czernecki; T. Suski ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 351 KB

In this study, we present the results of investigation on p-n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77-350 K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequen