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Determination of the radiation damage in arsenic-implanted silicon by profiling the oxide growth rate

✍ Scribed by Miko⧸aj Kisielewicz; Christoph Wagner

Publisher: Elsevier Science
Year: 1981
Tongue: English
Weight: 338 KB
Volume: 85
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(81)90048-1

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