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Determination of the inelastic mean free path of electrons in GaAs and InP after surface cleaning by ion bombardment using elastic peak electron spectroscopy

✍ Scribed by L. Zommer; B. Lesiak; A. Jablonski; G. Gergely; M. Menyhard; A. Sulyok; S. Gurban

Book ID
108437167
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
689 KB
Volume
87
Category
Article
ISSN
0368-2048

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Determination of the inelastic mean free
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Theoretical values of the inelastic mean free path (IMFP) and their electron-energy dependence are available in the literature from predictive formulae for various categories of materials, such as elemental solids, inorganic and organic compounds. in contrast, the experimental IMFP values were deter

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The IMFP of electrons is a fundamental material parameter of surface analysis by AES, XPS, EPES and EELS. In surface analysis calculated IMFP values are used. Their experimental determination is rather difficult The IMFP of amorphous Ge and polycrysralline Si was determined by comparing rhe elastic