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Determination of the denuded zone in Czochralski-grown silicon wafers through MOS lifetime profiling

✍ Scribed by Paz, O.; Schneider, C.P.


Book ID
114595458
Publisher
IEEE
Year
1985
Tongue
English
Weight
936 KB
Volume
32
Category
Article
ISSN
0018-9383

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## Abstract The formation of an oxygen precipitate denuded zone in nitrogen‐doped Czochralski (NCZ) silicon and conventional CZ silicon subjected to ramping anneals under Ar or O~2~ ambient has been investigated. It is revealed that the nitrogen doping is able to homogenize substantially the densit