Effect of ramping anneals under inert or
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Ma, Xiangyang ;Tian, Daxi ;Gong, Longfei ;Yang, Deren
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Article
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2006
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John Wiley and Sons
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English
β 206 KB
## Abstract The formation of an oxygen precipitate denuded zone in nitrogenβdoped Czochralski (NCZ) silicon and conventional CZ silicon subjected to ramping anneals under Ar or O~2~ ambient has been investigated. It is revealed that the nitrogen doping is able to homogenize substantially the densit