Determination of semiconductor quantum dot parameters by optical methods
โ Scribed by N.R. Kulish; V.P. Kunets; M.P. Lisitsa
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 128 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
โฆ Synopsis
Optical methods and their limitations are described that allow one to obtain the physical parameters of semiconductor nanocrystals (quantum dots) embedded in a glass matrix. The parameters determined are: average radius, confinement energy, band gap, number of atoms in an average-radius nanocrystal, hydrostatic pressure caused by a glass matrix, composition, acceptor energies, Coulomb energy, carriers' lifetime, absorption cross section, concentration of nanocrystals. CdS x Se 1-x nanocrystals in KS-10, OS-12 and Corning 2-61 commercial glasses and CdSe nanocrystals in the experimental glass are investigated.
๐ SIMILAR VOLUMES
The luminescence spectrum of CdSe/CdS core-shell nanocrystals contains a dominant exciton band located at the CdSe core and an additional weak non-excitonic band, associated with trapped carriers. The present paper describes our efforts to identify the influence of CdSe/CdS interfaces on the localiz
We present a theoretical study of optical second-harmonic generation (SHG) of symmetric semiconductor quantum dots (QDs) excited by the near field of the tip in a near-field scanning optical microscope. We show that the usual optical transition selection rules for the SH nonlinear interaction betwee
a), A. I. Bibik (b), L. I. Gurinovich (b), S. V. Gaponenko (b), H. Jaschinski (c), and U. Woggon \* ) (c)
The optical and structural properties of ultrathin insertions in wide-bandgap semiconductors are studied. Structural investigations confirm that in nitride-based structures indium fluctuations lead to the formation of nano-islands. The zero-dimensional character in nitride-and II-VI-based quantum do