β Scribed by J.M. Zhu; W.Z. Shen; Y.H. Zhang; H.F.W. Dekkers
No coin nor oath required. For personal study only.
We have presented an improved method for the determination of both effective diffusion length (L eff ) and saturation current density (J 01 , J 02 ) in silicon solar cells. The modifications overcome the limitation of Taretto et al.'s method [J. Appl. Phys. 93 (2003) 5447] by investigating the effects of series resistance (R s ), shunt resistance (R sh ), high carrier injection contribution and other mechanisms, such as the Poole-Frenkel current, trap assisted tunneling current, etc. on J 02 as well as L eff , with the aid of experimental dark current-voltage characteristics. It is found that the high injection contribution has played a key role in J 02 and L eff , in contrast to the negligible effect of R s , R sh and the other mechanisms. The consideration of both the low and high injection contribution for J 02 has resulted in good agreement between the theoretical and experimental L eff , J 01 , and J 02 . We have further demonstrated the reliability and significance of the improvements by comparing with the reported L eff results in the literature.
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