Characterization of diffusion length degradation in Czochralski silicon solar cells
β Scribed by Reiss, J. H.; King, R. R.; Mitchell, K. W.
- Book ID
- 118263849
- Publisher
- American Institute of Physics
- Year
- 1996
- Tongue
- English
- Weight
- 375 KB
- Volume
- 68
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.116581
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract This study focuses on the evolution under illumination of the electrical performances of solar cells made with __n__βtype boronβphosphorus compensated Czochralski silicon. First, we show via carrier lifetime measurements that this material is sensitive to lightβinduced degradation (LID)
We have presented an improved method for the determination of both effective diffusion length (L eff ) and saturation current density (J 01 , J 02 ) in silicon solar cells. The modifications overcome the limitation of Taretto et al.'s method [J. Appl. Phys. 93 (2003) 5447] by investigating the effec
Metal-insulator-silicon (MIS) solar cells with and without grain boundaries were fabricated using polycrystalline Czochralski silicon. Scanned laser spot methods were used to provide high resolution photocurrent and surface reflection images of these cells. Electrically active grain boundaries, reve