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Determination of depth profiling of metal trace impurities on Si surface using total reflection X-ray fluorescence

✍ Scribed by Q. -M. Fan; Y. -W. Liu; D. -L. Li; C. -L. Wei

Book ID
112292801
Publisher
Springer
Year
1993
Tongue
English
Weight
269 KB
Volume
345
Category
Article
ISSN
1618-2650

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Total reΓ‘ection x-ray photoelectron spectroscopy (TRXPS) has been applied to measure contamination elements on Si wafers using an x-ray photoelectron spectrometer. The radiated x-rays are limited by a slit placed in front of the Al anode, and the grazing angle is made shallow by using a crystal to m