Determination of CdIn2S4 semiconductor parameters by (photo)electrochemical technique

✍ Scribed by R.R. Sawant; K.Y. Rajpure; C.H. Bhosale

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 442 KB
• Volume: 393
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2007.01.009

✦ Synopsis

Semiconducting n-CdIn 2 S 4 thin films have been deposited on amorphous and fluorine-doped tin oxide (FTO) coated glass substrates by using a well-known spray pyrolysis technique. With the objective of finding the optimum conditions for the deposition of CdIn 2 S 4 thin films, the influence of substrate temperature on properties of the films have been studied. Photoelectrochemical (PEC) technique has been employed to optimize substrate temperature. The films are characterized by the techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis by X-rays (EDAX) and PEC studies. The SEM studies reveal the compact morphology with large number of grains. EDAX studies show that the material formed at optimized substrate temperature is nearly stoichiometric. Measured values of efficiency (Z) and fill factor (FF) for the PEC cell are 1.06% and 0.47, respectively. Various physical parameters of cadmium indium sulphide (CdIn 2 S 4 ) film are estimated. Energy band diagrams for CdIn 2 S 4 and polysulphide electrolyte, before and after making junction have been constructed.