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Determination of a physical model for double diffused transistors

✍ Scribed by R.E. Thomas; A.R. Boothroyd

Book ID
118361546
Publisher
Elsevier Science
Year
1968
Tongue
English
Weight
934 KB
Volume
11
Category
Article
ISSN
0038-1101

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A model for abrupt double heterojunction
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## Abstract In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermi–Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction