Detection of Lattice Match between ZnSxSe1–x Epilayers and GaAs Substrates by Polarisation Raman Spectroscopy

✍ Scribed by Nguyen Quang Liem; Do Xuan Thanh; Vu Xuan Quang; Le Van Hong

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 96 KB
• Volume: 229
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200201)229:1<47::aid-pssb47>3.0.co;2-p

✦ Synopsis

Nearly lattice-matched ZnS x Se 1--x (0

x < 0.1) grown heteroepitaxially on (001) GaAs substrates was studied by Raman spectroscopy. We observed clearly Raman scattering on the plasmon-longitudinal optical (LO) phonon coupled mode at the GaAs side of the ZnS x Se 1--x -GaAs interfacial region under suitably polarised exciting light, i.e. light with electric field perpendicular to the [110] crystallographic axis. By the systematical study of Raman scattering on the coupled mode as a function of S substitution we found a clear correlation between the plasmon-LO phonon coupling strength and the lattice match. At the well-matched grown epilayer, ZnS 0.06 Se 0.94 , the Raman scattering on the plasmon-LO phonon coupled mode appears to be strongest.