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Detailed investigation of electron transport, capture and gain in Al 0.3 Ga 0.7 As/GaAs quantum well infrared photodetectors

✍ Scribed by Cellek, O O; Besikci, C

Book ID
121447336
Publisher
Institute of Physics
Year
2003
Tongue
English
Weight
188 KB
Volume
19
Category
Article
ISSN
0268-1242

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Hole structure of a GaAs-Al 0.3 Ga 0.7 As p-type multiple quantum well (MQW) subjected to an electric field parallel to the growth axis is studied using the envelope-function approximation and taking into account the valence subband mixing. The system considered in this work consists of five GaAs we