Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors

✍ Scribed by Colin Reese; Zhenan Bao

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 592 KB
• Volume: 19
• Category: Article
• ISSN: 1616-301X
• DOI: 10.1002/adfm.200801019