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Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors

✍ Scribed by Colin Reese; Zhenan Bao


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
28 KB
Volume
19
Category
Article
ISSN
1616-301X

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