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Destruction mechanisms for formaldehyde in atmospheric pressure low temperature plasmas

✍ Scribed by Storch, Daniel G.; Kushner, Mark J.

Book ID
111982233
Publisher
American Institute of Physics
Year
1993
Tongue
English
Weight
807 KB
Volume
73
Category
Article
ISSN
0021-8979

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Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lowtemperature direct wafer bonding with annealing temperatures down to 100 Β°C. The experimental setup and the bond procedure are described and the influences of different experimental parameters, such