✦ LIBER ✦

Design of wideband hybrid silicon carbide single-stage power amplifier

✍ Scribed by Almira Jean; Rusli; Zhongxiang Shen

Book ID: 104050428
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 156 KB
Volume: 83
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2005.10.016

No coin nor oath required. For personal study only.

✦ Synopsis

RF wideband power amplifiers are desirable as they will reduce equipment, power consumption and operating cost for the RF communication infrastructure. For decades, the realization of single-stage broadband power amplifier has posed a significant challenge due to the electrical and thermal limitations of GaAs transistor technology. Silicon carbide (SiC) MESFET technology is a strong contender for such applications due to its superior properties. In particular, its high impedance reduces mismatch commonly encountered in such power amplifier.

In this work, design of wideband hybrid single-stage power amplifier using a commercial 4H-SiC MESFET CRF24010 from Cree Inc is presented. The amplifier has been designed and fabricated for operating frequencies 650-1800 MHz, which is equivalent to more than 90% bandwidth, compared to only 3-4% bandwidth achievable using GaAs technology.

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